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| oH VE S CO AV R M AI SIO PL LA N IA BL S NT E TISP4C125H3BJ THRU TISP4C395H3BJ LOW CAPACITANCE BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS *R TISP4CxxxH3BJ Overvoltage Protector Series Ion-Implanted Breakdown Region - Precise and Stable Voltage - Low Voltage Overshoot under Surge - Low Off-State Capacitance Device Name TISP4C125H3BJ TISP4C145H3BJ TISP4C180H3BJ TISP4C220H3BJ TISP4C250H3BJ TISP4C290H3BJ TISP4C350H3BJ TISP4C395H3BJ VDRM V 100 120 145 180 190 220 275 320 V(BO) V 125 145 180 220 250 290 350 395 MD-SMB-004-a SMB Package (Top View) R1 2T Device Symbol T Rated for International Surge Wave Shapes Wave Shape 2/10 10/160 10/700 10/560 10/1000 Standard GR-1089-CORE TIA-968-A ITU-T K.20/21/45 TIA-968-A GR-1089-CORE IPPSM A 500 200 150 100 100 R SD-TISP4xxx-001-a ....... TISP4C290H3BJ, TISP4C350H3BJ & TISP4C395H3BJ are UL Recognized Components Description This device is designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground). The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c. latchup as the diverted current subsides. Please contact your Bourns representative if the protection voltage you require is not listed. How to Order For Standard Termination Finish Order As TISP4CxxxH3BJR For Lead Free Termination Finish Marking Code Order As TISP4CxxxH3BJR-S 4CxxxH Device TISP4CxxxH3BJ Package SMB Carrier Embossed Tape Reeled Std. Qty. 3000 Insert xxx corresponding to device name. *RoHS Directive 2002/95/EC Jan 27 2003 including Annex SEPTEMBER 2004 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4CxxxH3BJ Overvoltage Protector Series Absolute Maximum Ratings, TA = 25 C (Unless Otherwise Noted) Rating '4C125H3BJ '4C145H3BJ '4C180H3BJ '4C220H3BJ '4C250H3BJ '4C290H3BJ '4C350H3BJ '4C395H3BJ Symbol Value 100 120 145 180 190 220 275 320 500 200 150 100 100 30 2.1 -40 to +150 -65 to +150 Unit Repetitive peak off-state voltage VDRM V Non-repetitive peak impulse current (see Notes 1 and 2) 2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 10/160 s (TIA-968-A, 10/160 s voltage wave shape) 5/310 s (ITU-T K.44, 10/700 s voltage wave shape used in K.20/21/45) 10/560 s (TIA-968-A, 10/560 s voltage wave shape) 10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) Non-repetitive peak on-state current (see Notes 1, 2 and 3) 20 ms, 50 Hz (full sine wave) 1000 s, 50 Hz Junction temperature Storage temperature range ITSM TJ Tstg A C C IPPSM A NOTES: 1. Initially the device must be in thermal equilibrium with TJ = 25 C. 2. The surge may be repeated after the device returns to its initial conditions. 3. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. Electrical Characteristics, TA = 25 C (Unless Otherwise Noted) Parameter IDRM Repetitive peak off-state current VD = VDRM Test Conditions TA = 25 C TA = 85 C '4C125H3BJ '4C145H3BJ '4C180H3BJ '4C220H3BJ '4C250H3BJ '4C290H3BJ '4C350H3BJ '4C395H3BJ '4C125H3BJ '4C145H3BJ '4C180H3BJ '4C220H3BJ '4C250H3BJ '4C290H3BJ '4C350H3BJ '4C395H3BJ Min Typ Max 5 10 125 145 180 220 250 290 350 395 135 155 190 230 260 300 360 405 600 3 150 '4C125H3BJ '4C145H3BJ '4C180H3BJ '4C220H3BJ '4C250H3BJ '4C290H3BJ '4C350H3BJ '4C395H3BJ 600 50 Unit A V(BO) Breakover voltage dv/dt = 250 V/ms, RSOURCE = 300 V V(BO) Impulse breakover voltage dv/dt 1000 V/s, Linear voltage ramp, Maximum ramp value = 500 V di/dt = 10 A/s, Linear current ramp, Maximum ramp value = 10 A dv/dt = 250 V/ms, RSOURCE = 300 IT = 5 A, tw = 100 s IT = 5 A, di/dt = 30 mA/ms V I(BO) VT IH Breakover current On-state voltage Holding current mA V mA 45 pF CO Off-state capacitance f = 1 MHz, Vd = 1 V rms, VD = -2 V 40 SEPTEMBER 2004 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4CxxxH3BJ Overvoltage Protector Series Thermal Characteristics, TA = 25 C (Unless Otherwise Noted) Parameter Test Conditions EIA/JESD51-3 PCB, IT = ITSM(1000) (see Note 4) 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000) NOTE: 50 Min Typ Max 113 C/W Unit RJA Junction to ambient thermal resistance 4. EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths. Parameter Measurement Information +i I PPSM Quadrant I Switching Characteristic ITSM ITRM IT VT IH V (BR)M -v I(BR) V (BR) I(BO) V DRM IDRM VD ID ID VD V(BO) I(BO) IDRM V DRM V (BR)M V (BR) I(BR) +v IH V(BO) VT IT ITRM Quadrant III Switching Characteristic -i ITSM I PPSM PM-TISP4xxx-001-a Figure 1. Voltage-Current Characteristic for T and R Terminals All Measurements are Referenced to the R Terminal SEPTEMBER 2004 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. TISP4CxxxH3BJ Overvoltage Protector Series Typical Characteristics 1.1 1.0 Capacitance Normalized to VD = 2 V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1 NORMALIZED CAPACITANCE vs OFF-STATE VOLTAGE TC-TISP4C-002-a TJ = 25 C Vd = 1 Vrms 10 VD - Off-state Voltage - V 100 "TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries. SEPTEMBER 2004 - REVISED FEBRUARY 2006 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications. |
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